A characterization technique for second breakdown in Ge alloyed junction transistors

A characterization technique for second breakdown in Ge p-n-p alloyed junction transistors with the open base condition is described. This method is based on the saturated characteristics which are expressed in the form of exponential dependence on the slope of the rising part of the applied voltage. Using this method, a comparison is made of transistor SB characteristics in terms of device characteristics, such as BV
CEO
and H
FE
.