Characteristics and abruptness of InGaAs/InP quantum well and optoelectronic applications of quantum wells grown by GSMBE

High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications.<
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