A study of ohmicity and exclusion in high-low semiconductor junction devices

The purpose of this paper is to describe the terminal properties of a class of high-low conductivity junction devices. In particular, the static forward-bias characteristics of the
Rnn^{+}R
structure are found to be linear at low current densities and a critical current density level is derived, above which the forward-bias volt-ampere characteristics are nonlinear. In reverse bias some nonlinearity is present due to minority carrier exclusion and conditions are given for achieving linearity. Experimental studies show a capacitive effect present due to carrier exclusion and these data are discussed in terms of the present model.