On multiplication and avalanche breakdown in exponentially retrograded silicon P-N junctions

An analysis of avalanche breakdown in exponentially retrograded p-n junctions results in simple criteria for avoiding breakdown in such structures. Breakdown voltages are shown to be extremely dependent on the surface concentration and grading constant of the retrograded region. The effect of background resistivity on breakdown is also analyzed. Unusual saturation effects in the multiplication voltage curves of retrograded p-n diodes are predicted theoretically. Experimental results point towards a confirmation of this theory.