Theoretical and experimental studies of the effects of strain on the performance of InP/InGaAs SCH-MQW lasers

Theoretical studies of the effects of biaxial strain on the performance of InP/InGaAs/InGaAsP multiple quantum well separate confinement heterostructure (MQW-SCH) lasers are discussed. The devices are found to exhibit characteristics that agree with predicted trends. No minimum in the threshold density curve has been found. The best devices exhibited threshold current densities of 689 A/cm/sup 2/, internal quantum efficiencies of approximately unity and loss coefficients of approximately 5.6 cm/sup -1/.<
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