A 0.7dB insertion loss CMOS-SOI antenna switch with more than 50dB isolation over the 2.5 to 5GHz band

Taking full advantage of the high resistivity substrate and underlying oxide of SOI technology, a high performance CMOS SPDT T/R switch has been designed and fabricated in a partially depleted, 0.25µm SOI process. The targeted Bluetooth class II specifications have been fully fitted. The switch over the high resistivity substrate exhibits a 0.7dB insertion loss and a 50dB isolation at 2.4GHz; at 5GHz insertion loss and isolation are 1dB and 47dB respectively. The measured ICP
^1dB
is +12dBm.