A wide-band 0.5 /spl mu/m CMOS low-noise amplifier

A wide-band low-noise amplifier designed in 0.5 /spl mu/m CMOS process is discussed in this paper. Simulation results show that this low-noise amplifier is able to achieve a very wide bandwidth from 70 MHz to 1.6 GHz, with the maximum gain of 12.4 dB, and NF below 2 dB. In addition, compared to other known CMOS wide-band topologies, this low-noise amplifier has a better linearity with its 1 dB compression point at 0.5 dBm.