Strain-induced very low noise RF MOSFETs on flexible plastic substrate

Using microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NF/sub min/) and high 12 dB associate gain are measured at 10 GHz of 0.18/spl mu/m MOSFET on plastic without de-embedding. The die on plastic was thinned to 30/spl mu/m that allows applying uniaxial strain to further lower the 10 GHz NF/sub min/ to only 0.92 dB and comparable well with the 0.13/spl mu/m and 90nm nodes MOSFETs.