A new strained-SOI/GOI dual CMOS technology based on local condensation technique

Strained Si-on-insulator NMOSFETs and strained SiGe-on-insulator PMOSFETs were integrated, for the first time, using the local condensation technique. Both P- and NMOSFETs exhibited significant mobility and current drive enhancements. Furthermore, ultrathin-body SOI NMOSFETs and strained Ge-on-Insulator PMOSFETs were also integrated. Over 4 times higher hole-mobility enhancement was achieved in the GOI-PMOSFET, resulting in a comparable current drive with the NMOSFET.