Fabrication of a vertical MRAM device

The fabrication and testing of annular shaped memory elements at the deep submicron scale is presented using combined electron beam and optical lithographic techniques. The device structures were designed for four-point probe measurements of a single ring, two rings in series, or four rings in series. The fabricated rings had a 600 nm outer diameters, 200 nm inner diameter, and consisted of three repeats of a CoFe/Cu/NiFe CPP GMR stack.