Silicon semi 3D radiation detectors

The paper describes the first results on the behavior of semi three dimensional (3D) silicon radiation detectors. As compared to the normal 3D detectors with the n- and p-type vertical doping profiles, the present structure employs the p-type profiles, only. The report covers the proposed new structure, fabrication sequence, the electrical characteristics like the capacitance, leakage current, breakdown voltage, X-ray response for the Am-source. These results are reported for the high resistivity Cz and FZ starting material. The measured electrical characteristics are compared with the 3D simulation results obtained with the ISE TCAD software. In addition, the 3D mixed mode transient simulations are employed in order to learn about the signal charge collection capabilities of the new structure.