Investigation of structures using GaN/sub x/P/sub 1-x/ active layer

GaN
_x
P
_1-x
/GaP beterostructure with GaNP layer containing Merent N content in range from 0.67 to 2.3% prepared by MOVPE were investigated. The N concentration in GaNP alloy was determined by X-Ray measurement and bandgap energy for different N concentration by employing photocurrent measurement. Visible electro-luminescence emission at room temperature peak intensity in range from 608 nm to 630 nm was observed.