Oxygen gas assisted electron beam lithography in organosilane self-assembled monolayers

Organic self-assembled monolayers (SAMs) have attracted a great deal of attention as resists because of their good orientation, uniformity, and strong binding force to a substrate. SAMs maximize their abilities to micro- and nano-fabrication. Therefore, electron beam (EB) and focused ion beam lithography of SAMs are required [ 1,2]. However, a higher energy EB, which has a smaller beam size, is not suitable for the patterning of SAMs, since the higher energy EB penetrates more deeply into the substrate and relatively less interact with the SAMs [3].