Development of fast photospeed chemically amplified resist in EUV lithography

In EUV lithography, the requirement of the resist sensitivity is less than 2 mJ/cm*, which gives the large relaxation to the requirement of the EUV light source power. Furthermore, the line width roughness (LWR) of less than 2 nm (3 sigma) and outgassing total fragment pressure of less than 10^-6 Pa during the exposure time are required.