Gate bias dependent evolution due to two unintentionally formed quantum dot in a silicon-on-insulator nano-wire transistor

Silicon nano-devices can be fabricated by standard complementary metal-oxide-semiconductor processes, and are considered as a promising candidate for future integrated-circuit elements. Such silicon nano-devices usually exhibit single electron transport, which originates from the unintentional formation of quantum dots (QDs) in the electron channel [1]. However, careful transport studies of the parasitic QDs have been neglected in most cases, even though it is clearly an important issue for the reproducible fabrication of silicon nano-devices [2].