Highly accurate proximity effect correction for 100 kV electron projection lithography

In 100 kV electron projection lithography (EPL), the proximity effect correction (PEC) by mask bias (resize) method is the most critical issue for obtaining high critical dimension (CD) accuracy, A 2-Gaussian model, consisting of electron forward scattering and backscattering, is commonly used as a conventional exposure intensity distribution (EID) fimction in a PEC program’’, however, it is known that this model alone cannot provide an adequate approximation to an actual EID function.