High frequency oscillators using cointegrated BAW thin-film piezoelectrics with microwave BJTs

The authors report on the design of UHF and L-band oscillators using of sputter-deposited, thin-film, aluminum nitride resonators cointegrated with microwave f/sub T/=2.5 GHz bipolar junction transistors (BJTs). This technology uses reactive ion etching (RIE) trench-isolated 2.5-GHz BJTs cointegrated with high-Q AlN resonators synthesized with an anisotropic etch along the