Improving gate-oxide reliability by TiN capping layer on NiSi FUSI metal gate

The impact of TiN capping layer on gate oxide reliability of NiSi fully silicided metal gate was investigated. It was found that the TiN capping layer significantly improved V/sub th/ stability and oxide reliability during negative bias temperature stress. Better life-time performance was also extrapolated for the samples with TiN capping layer.