Grown junction GaAs solar cell

Using multiple layer liquid phase epitaxial (LPE) growth techniques, p(Al
x
Ga
1-x
As:Ge)-p(GaAs:Ge)-n
⁺
(GaAs:Te) solar cells were fabricated. Germanium was used as the p-type dopant to eliminate impurity diffusion and to maximize minority carrier diffusion lengths. These procedures provide precise control of the thickness and carrier concentration of each individual layer.