Neuristor-line operation with function of variable propagation velocity in plasma-coupled semiconductor devices

Operation of a solid-state active line using the plasma-coupled semiconductor device has been confirmed. The effective pulse propagation velocity in the line varies from 4×10
⁴
cm/s to 1.9×10
⁵
cm/s depending on the bias voltage. It is found that the active line also has several properties required to operate as a neuristor line.