Improved diode and circuit procedures for high-efficiency S-band oscillators

Avalanche diodes designed on the basis of recently published guidelines for the high-efficiency mode and a new microstrip circuit were combined to obtain record S-band pulsed oscillator powers. Outputs of up to 325 W from a pair of chips mounted in one package were obtained. The new circuit is characterized by a number of advantages of a practical nature including ruggedness and ease of tuning.