A self-scanned image sensor employing MOS structure

Studies were carried out on a self-scanned image sensor comprising a linear integrated-circuit array of photodiodes and metal-oxide-semiconductor (MOS) transistors. It was found that the maximum scanning rate is about 2.5×10
⁵
bits/s, and that the value is mainly restricted by the photo-induced current and the junction capacitance of the photodiode.