Epitaxial GaAs p-n junction field-effect transistors

Structure and fabrication of single-gate GaAs p-n junction field-effect transistors is described. The devices employ n-type GaAs layers grown epitaxially on semi-insulating substrates of GaAs. Experimental devices indicate a cutoff frequency of approximately 2 GHz. Optimized device geometries promise operation at microwave frequencies as amplifiers and oscillators. Negative resistance oscillations above a field of approximately 3 × 10
³
V/cm have been observed.