Schottky emission in thin-film diodes containing manganese

Temperature-dependent I-V characteristics have been observed in thin-film diodes consisting of Al, Mn, and Pb. Straight-line plots of In I - V
^1/2
, d in I/dV
^1/2
- 1/T, and In (I/T
²
)-1/T indicate that Schottky emission is taking place. A diode was tested for 98 hours without barrier breakdown.