The equivalent circuit model in solid-state electronics—Part II: The multiple energy level impurity centers

In this paper, the equivalent circuit of a defect center with multiple energy levels in a semiconductor is formulated and applied to the calculation of the characteristic time constants of the multiple energy level system. Detailed numerical example of gold-doped silicon is given, including the constant characteristic time constant contour maps. The steady-state charge distribution ratio R
N
= N
s+1
/N
s
(s = charge state of the center) and recombination rate ratio R
R
(s) = R
SS
(s = ½)/(R
SS
(s-½) diagrams are developed and applied to the numerical calculations of the steady-state recombination and generation rate of electrons and holes in gold-doped silicon.