Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

In this paper we present the correlation between the impact ionization gate current with the S/sub 22/ scattering parameter measured in the 50 MHz - 6 GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y/sub 22/ at low frequencies.