An analytical charge density model comprising 1D quantum mechanical (QM) effect for sub-100nm bulk silicon MOSFETs

An analytical charge density model considering 1D quantum mechanical (QM) effect perpendicular to the channel, which has substantial impact on the characteristics of sub-100nm bulk silicon MOSFETs is developed. The model yields excellent accuracy compared to numerical simulations in both sub-threshold region and strong inversion region, in a large range of channel doping and oxide thickness. Therefore, it is promising to develop a more accurate I-V and C-V model for nano-scale MOSFETs, especially in sub-threshold region.