RF reliability of MOSFETs subject to electrical stress

The impact of gate and drain voltage stress on the analog performance of MOSFETs at RF frequencies was studied systematically. 0.16-/spl mu/m NMOSFETs have been evaluated experimental to examine the RF performance metrics such as cutoff frequency, linearity, noise figure, and 1/f noise. A methodology is presented to study the reliability in MOSFETs subject to stress. Both circuit simulation and measurement data are employed to prove the finding and methodology.