Effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon

The effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon has been investigated at low temperature in this paper. It is found that oxygen precipitation has been enhanced in neutron-irradiated silicon by prolonged annealing at 750/spl deg/C, which is based on denser precipitate nuclei. Furthermore, by Fourier transform infrared spectrometry (FTIR) the VO complexes can transfer into VO/sub 2/ and VO/sub 3/ complexes during low temperature annealing. Based on these facts, it is reasonably deduced that in neutron irradiated silicon the VO complexes can become the pre-nuclei of oxygen precipitates at low temperature, and therefore enhance oxygen precipitation.