Analysis on the surface electrical field of high voltage bulk-silicon LEDMOS with multiple field plates

In this paper, the surface electrical field distributions along the drift regions of the conventional LEDMOS, TPFP LEDMOS and M-TPFP LEDMOS were presented by MEDICI respectively. In terms of the analysis and discussion results on the changes of the electrical field peaks of the three high voltage LEDMOS, a method to improve the breakdown capability of the high voltage BS LEDMOS was given. The analysis results also proved that the metal wires crossed the LEDMOS wouldn't degrade the breakdown capability of the high voltage LEDMOS for the thick oxide layer.