Sensors and instrumentation for the magnetic field measurement under high neutron fluences

We present the results of a study of Hall-type magnetic field semiconductor sensors, based on monocrystalline whiskers and InSb thin films under harsh radiation conditions created by high-energy neutron irradiation up to the fluence of F=3.1/spl middot/10/sup 16/ n/spl middot/cm/sup -2/ in the reactor IBR-2 and up to the fluence of F= 1/spl middot/10/sup 18/ n/spl middot/cm/sup -2/ in reactor LVR-15. Optimal parameters of sensors' semiconductor materials, ensuring maximum stability under these radiation conditions, were determined.