Frequency mixing characteristics of room-temperature triple-barrier resonant tunneling diodes in 100 GHz band

Frequency mixing characteristics are examined for GaInAs/InAlAs triple-barrier resonant tunneling diodes operating at room temperature in 100 GHz band. To reduce the capacitance, the diameter is made as small as 0.8 /spl mu/m. When the bias voltage is set in the negative differential conductance region, clear heterodyne signals can be obtained.