A compact QM-based mobility model for nanoscale ultra-thin-body CMOS devices

Physical insights, Monte Carlo simulations, and QM-(quantum mechanics) based analysis are used to develop a compact model for effective carrier mobility in generic ultra-thin-body (UTB) silicon CMOS devices. The model accounts for crucial dependences on UTB thickness as well as electric field and crystal orientation, and has only two tuning parameters that can be calibrated via measurements of mobility in thick-body devices. It is verified using large sets of measured data from FD/SOI and DG MOSFETs.