A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETs

A unification of time-exponents for negative bias temperature instability (NBTI) and hot carrier injection (HCI) is established under the geometric interpretation of interface trap generation. Resolving the fundamental inconsistencies, a numerical reaction-diffusion (R-D) model that agrees with recent measurements is developed. The implications regarding the degradations of future sub-100 nm planar and surround-gate MOSFETs are presented.