A millimeter-wave linear low noise amplifier in sige HBT technology with substrate parasitic model

This paper outlines the design and implementation of a monolithic millimeter-wave low noise amplifier (LNA) fabricated in a 200 GHz SiGe HBT technology. A simple analytical model of electromagnetic and substrate parasitic effects inherent at millimeter-wave frequencies is also included. A measured gain of 13.3 dB at 45 GHz, with an associated 3 dB bandwidth of 6.7 GHz, is exhibited by the LNA, along with a noise figure of 4.5 dB. The LNA provides linear performance with an IIP, of -8 dBm and it dissipates 18 mW.