A high efficient LDMOS power amplifier based on an inverse class F architecture

A power amplifier based on the inverse Class F topology bas been developed. The design has been done at 1 GHz with an LDMOS transistor as an active element. The PAE and the drain eficiency of the power amplifier are 73.8% and 77.8% respectively at an output power of 12.4W. This is to our knowledge the highest efficiency and output power for an LDMOS-based inverse Class F power amplifier working at 1 GHz.