Ring oscillator with high speed XMOS transistors [cross gate MOSFETs]

In this paper, we demonstrate a new method of improving the conventional MOSFET (MOS) switching speed without changing the channel length and the technology used for fabrication. We add a 90 degree twisted poly gate to the original poly gate to form a cross gate MOSFET (XMOS) to improve the MOS transistor switching speed. The measurement results from a ring oscillator show that the gate delay of the MOS inverter and the XMOS inverter are 36.7 ps and 32.2 ps respectively. Hence, the MOS transistor switching speed is proven to improve up to 12.3% by applying the cross gate structure.