Contributions to development of power SiC devices

A comparative study on high voltage MOSFET and IGBT devices (internal cell, electrical characteristics) demonstrate the similarity of both devices. This work presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for V/sub GS/=-80 V), with a specific on-resistance as low as 13 mW/cm/sup 2/, 100-200 lower than similar IGBT on Si. Comparing the circuit performance to that of a SiC IGBT, it turns out is almost twice faster than the MOSFET.