On the modelling of electrons in thermo-electronic modelling of Si MOSFETs

Importance of the modeling of electrons in coupled electro-thermal analysis of Si MOSFETs is discussed. The simple, lumped-electron temperature model predicts drastic increase of the electron temperature above the electric field of the order of 10/sup 6/V/m. Also, the calculation of electron thermal conductivity predicts that the thermal conductivity reaches on the order of 10/sup -1/ W/m-K. Numerical calculation of coupled electrical and thermal analysis predicts 10/sup 3/ K order of temperature gradient in the channel region. These results clearly exhibit the importance of the modeling of electrons in the coupled analysis.