Study of junction leakage caused by cobalt silicide defects

We observed junction leakage caused by cobalt silicide defects in high-density and high-performance VLSI semiconductor production. We found the cobalt silicide defects were formed due to a small amount of oxygen present during the cobalt silicide film formation. Strict control of silicide process to prevent cobalt silicide formation in the presence of oxygen has effectively reduced the defects and improved shallow junction leakage characteristics.