State of the art thermal analysis of GaAs/InGaP HBT

Increasing junction temperatures and reliability requirements demand an accurate thermal analysis of RF power amplifiers in hand-sets. An incorrect estimate of junction temperatures will lead to either a too optimistic or a too conservative reliability assessment, neither of which is desired. We describe thorough thermal analysis of Triquint's InGaP HBT processes. By comparing several experimental techniques and finite element simulations, an accurate determination of junction temperature is obtained. The accurate junction temperature results in an accurate assessment of reliability, which enables the HBT technology to be utilized to its full extent.