Fabrication and operation of sub-50 nm strained-Si on Si/sub 1-x/Ge/sub x/ Insulator (SGOI) CMOSFETs

First functional 45 nm SGOI CMOS devices on bonded SGOI substrates with T/sub SOI/<45 nm exhibited superior short-channel control and comparable reliability to SOI devices. A 67% Gm enhancement was observed in long-channel nMOS SGOI devices, 18% drive current increase for short-channel SGOI devices, and 12% faster ring-oscillators were exhibited with respect to control SOI devices. Functional SRAM bit cells down to V/sub dd/=0.9 V were also demonstrated.