Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance

We introduce a novel ultra-thin body (UTB) SOI MOSFET with a recessed source-drain (S/D) structure to solve the high source-drain extension (SDE) external resistance problem. Fabricated devices with 30 nm gate length and 5 nm channel are characterized. By the device simulation, we have shown that devices with a recessed S/D structure have a better electrical properties than those with a elevated S/D structure.