New magnetoresistance method for mobility extraction in scaled fully-depleted SOI devices

We propose to compare the main classical methods used for mobility parameters extraction (static method or split C-V) with a new approach based on magnetoresistance (MR) measurements. We focus on short channel devices behavior and compare it with long channel transistor behavior. This exhaustive study indicates that the magnetoresistance method is well adapted for thin film mobility extraction for fully-depleted SOI devices as thin as 10 nm.