New and accurate method for electrical extraction of silicon film thickness on fully-depleted SOI and double gate transistors

In this study, we propose an accurate method for electrical extraction of thin silicon film thickness, based on an analytical modelling of the subthreshold inversion charge valid from front to back channel conduction and including quantum confinement effects. This method has been validated on both numerical simulation and experimental results and can be used for low-doped channel FDSOI or double gate devices.