Effectiveness of using supply voltage as back-gate bias in ground plane SOI MOSFET

We show that GP-SOI MOSFETs are optimal for the DBB scheme offering high on-current and low design complexity without having power performance issues related to the forward-biased p-n junction current in bulk CMOS. It is also shown that GP-SOI can deliver the same performance as DG-SOI 90X lower standby leakage by dynamically switching the back-gate bias.