Threshold voltage of sub-10-nm-thick SOI MOSFET's at cryogenic temperature and quantum effects

We discuss the temperature dependence of the threshold voltage of fully-depleted SOI MOSFETs with 10 nm and 6 nm thick SOI layers both theoretically and experimentally at cryogenic temperatures. The theoretical temperature dependence of V/sub TH/ is derived on taking into account the effect of gate electrode degeneracy and the two-dimensional electrons with energy quantisation in the SOI layer.