Influence of the mechanical strain induced by a metal gate on electron and hole transport in single and double-gate SOI MOSFETs

We study the impact of the mechanical strain induced by a TiN metal gate on carrier transport in thin body SOI MOSFETs. The strain induced mobility variation has been calculated as a function of channel orientation and gate length, considering both n-MOS and p-MOS transistors with single or double gate architectures.