Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI

Strain engineering by lateral relaxation is a powerful method for generating large biaxial and uniaxial silicon strain in an SOI structure. By choosing the crystal direction of the features, one should be able to control not only the mobility enhancement, but also maximize the uniaxial strain. Uniaxial tensile strain as large as 1.0% in the (100) direction can be achieved in 10 nm silicon films.