Forming of AlGaAs nanodiode current-voltage characteristics

The analytic formula for Al/sub x/Ga/sub 1-x/As resonant-tunneling diode current-voltage characteristic (VCC) is obtained. It is applicable at the following restrictions: (1) the voltage across the diode is less then U/sub peak/; (2) the mole fraction /spl times/ Al in barrier Al/sub x/Ga/sub 1-x/As layers is more than 0.4; and (3) thickness of well GaAs layer is from 5 to 10 GaAs layers. The diagrams (degree of power-behaved VCC parameters of layers) and technological parameter tolerance are obtained from this formula. VCC shape I/spl sim/U/sup n/ alters from n=1 up to n=5, when parameters of layers are changed. Parameters of layers were determined for I/spl sim/U/sup 3/ VCC, diodes were made and subharmonic mixers on their basis were investigated. Good agreement of experiments with the theory is obtained.